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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201800649
|2 doi
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|a pubmed25n0947.xml
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|a (DE-627)NLM284216569
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|a (NLM)29775490
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Lee, Han Eol
|e verfasserin
|4 aut
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| 245 |
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|a Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 06.03.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm-2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain
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|a Journal Article
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|a bioelectronics
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|a flexible GaN vertical light-emitting diodes
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|a light-emitting diodes
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|a transparent micro-light-emtting-diodes
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|a wireless power transfer
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|a gallium nitride
|2 NLM
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|a 1R9CC3P9VL
|2 NLM
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|a Gallium
|2 NLM
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|a CH46OC8YV4
|2 NLM
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| 700 |
1 |
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|a Choi, JeHyuk
|e verfasserin
|4 aut
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1 |
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|a Lee, Seung Hyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jeong, Minju
|e verfasserin
|4 aut
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1 |
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|a Shin, Jung Ho
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Joe, Daniel J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, DoHyun
|e verfasserin
|4 aut
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|a Kim, Chang Wan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Jung Hwan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Jae Hee
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Daesoo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shin, Chan-Soo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Keon Jae
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 28 vom: 18. Juli, Seite e1800649
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:30
|g year:2018
|g number:28
|g day:18
|g month:07
|g pages:e1800649
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|u http://dx.doi.org/10.1002/adma.201800649
|3 Volltext
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