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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.8b00624
|2 doi
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|a pubmed24n0946.xml
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|a (DE-627)NLM284086339
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Moni, Priya
|e verfasserin
|4 aut
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|a Growth Rate and Cross-Linking Kinetics of Poly(divinyl benzene) Thin Films Formed via Initiated Chemical Vapor Deposition
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 17.09.2018
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|a Date Revised 17.09.2018
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Initiated chemical vapor deposition (iCVD) allows for the formation of highly cross-linked, polymer thin films on a variety of substrates. Here, we study the impact of substrate stage temperature and filament temperature on the deposition and cross-linking characteristics of iCVD from divinyl benzene. Maintaining a constant monomer surface concentration reveals that deposition rates upward of 15 nm/min can be achieved at substrate stage temperatures of 50 °C. The degree of cross-linking is limited by the rate of initiation of the pendant vinyl bonds. At a filament temperature of 200 °C, the pendant vinyl bond conversion is highly sensitive to the surface concentration of initiator radicals. A significant decrease of the pendant vinyl bond conversion is observed with increasing stage temperatures. At higher filament temperatures, the pendant vinyl bond conversion appears to plateau at approximately 50%. However, faster deposition rates yield lower conversion. This trade-off is mitigated by increasing the filament temperature to increase initiator radical production. A higher flux of initiator radicals toward the surface at a constant deposition rate increases the rate of initiation of pendant vinyl bonds and therefore their overall conversion. At a deposition rate of ∼7 nm/min, an increase in the filament temperature from 200 to 240 °C results in an 18% increase in the pendant vinyl bond conversion
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Mohr, Alan C
|e verfasserin
|4 aut
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| 700 |
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|a Gleason, Karen K
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 34(2018), 23 vom: 12. Juni, Seite 6687-6696
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:34
|g year:2018
|g number:23
|g day:12
|g month:06
|g pages:6687-6696
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|u http://dx.doi.org/10.1021/acs.langmuir.8b00624
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