Structural Evaluation of 5,5'-Bis(naphth-2-yl)-2,2'-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric

We report on the structure and morphology of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) films in bottom-contact organic field-effect transistors (OFETs) with octadecyltrichlorosilane (OTS) coated SiO2 gate dielectric, characterized by atomic force microscopy (AFM), grazing-incidence X-r...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 34(2018), 23 vom: 12. Juni, Seite 6727-6736
1. Verfasser: Lauritzen, Andreas E (VerfasserIn)
Weitere Verfasser: Torkkeli, Mika, Bikondoa, Oier, Linnet, Jes, Tavares, Luciana, Kjelstrup-Hansen, Jakob, Knaapila, Matti
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
LEADER 01000caa a22002652c 4500
001 NLM283984562
003 DE-627
005 20250223133254.0
007 cr uuu---uuuuu
008 231225s2018 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.8b00972  |2 doi 
028 5 2 |a pubmed25n0946.xml 
035 |a (DE-627)NLM283984562 
035 |a (NLM)29751725 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Lauritzen, Andreas E  |e verfasserin  |4 aut 
245 1 0 |a Structural Evaluation of 5,5'-Bis(naphth-2-yl)-2,2'-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric 
264 1 |c 2018 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 17.09.2018 
500 |a Date Revised 17.09.2018 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a We report on the structure and morphology of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) films in bottom-contact organic field-effect transistors (OFETs) with octadecyltrichlorosilane (OTS) coated SiO2 gate dielectric, characterized by atomic force microscopy (AFM), grazing-incidence X-ray diffraction (GIXRD), and electrical transport measurements. Three types of devices were investigated with the NaT2 thin-film deposited either on (1) pristine SiO2 (corresponding to higher surface energy, 47 mJ/m2) or on OTS deposited on SiO2 under (2) anhydrous or (3) humid conditions (corresponding to lower surface energies, 20-25 mJ/m2). NaT2 films grown on pristine SiO2 form nearly featureless three-dimensional islands. NaT2 films grown on OTS/SiO2 deposited under anhydrous conditions form staggered pyramid islands where the interlayer spacing corresponds to the size of the NaT2 unit cell. At the same time, the grain size measured by AFM increases from hundreds of nanometers to micrometers and the crystal size measured by GIXRD from 30 nm to more than 100 nm. NaT2 on OTS/SiO2 deposited under humid conditions also promotes staggered pyramids but with smaller crystals 30-80 nm. The NaT2 unit cell parameters in OFETs differ 1-2% from those in bulk. Carrier mobilities tend to be higher for NaT2 layers on SiO2 (2-3 × 10-4 cm2/(V s)) compared to NaT2 on OTS (2 × 10-5-1 × 10-4 cm2/(V s)). An applied voltage does not influence the unit cell parameters when probed by GIXRD in operando 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
700 1 |a Torkkeli, Mika  |e verfasserin  |4 aut 
700 1 |a Bikondoa, Oier  |e verfasserin  |4 aut 
700 1 |a Linnet, Jes  |e verfasserin  |4 aut 
700 1 |a Tavares, Luciana  |e verfasserin  |4 aut 
700 1 |a Kjelstrup-Hansen, Jakob  |e verfasserin  |4 aut 
700 1 |a Knaapila, Matti  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1985  |g 34(2018), 23 vom: 12. Juni, Seite 6727-6736  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnas 
773 1 8 |g volume:34  |g year:2018  |g number:23  |g day:12  |g month:06  |g pages:6727-6736 
856 4 0 |u http://dx.doi.org/10.1021/acs.langmuir.8b00972  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 34  |j 2018  |e 23  |b 12  |c 06  |h 6727-6736