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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201800449
|2 doi
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|a pubmed24n0943.xml
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|a (DE-627)NLM28311858X
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|a (NLM)29663532
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yang, Qu
|e verfasserin
|4 aut
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|a Ionic Gel Modulation of RKKY Interactions in Synthetic Anti-Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 06.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a To meet the demand of developing compatible and energy-efficient flexible spintronics, voltage manipulation of magnetism on soft substrates is in demand. Here, a voltage tunable flexible field-effect transistor structure by ionic gel (IG) gating in perpendicular synthetic anti-ferromagnetic nanostructure is demonstrated. As a result, the interlayer Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction can be tuned electrically at room temperature. With a circuit gating voltage, anti-ferromagnetic (AFM) ordering is enhanced or converted into an AFM-ferromagnetic (FM) intermediate state, accompanying with the dynamic domain switching. This IG gating process can be repeated stably at different curvatures, confirming an excellent mechanical property. The IG-induced modification of interlayer exchange coupling is related to the change of Fermi level aroused by the disturbance of itinerant electrons. The voltage modulation of RKKY interaction with excellent flexibility proposes an application potential for wearable spintronic devices with energy efficiency and ultralow operation voltage
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|a Journal Article
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|a Ruderman-Kittel-Kasuya-Yosida interactions
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|a flexible spintronics
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|a ionic gel gating
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|a synthetic anti-ferromagnetic multilayers
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|a voltage control of magnetism
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1 |
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|a Zhou, Ziyao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Liqian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Hongjia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Yuxin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Zhongqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Peng, Bin
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Ming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 22 vom: 02. Mai, Seite e1800449
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:22
|g day:02
|g month:05
|g pages:e1800449
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|u http://dx.doi.org/10.1002/adma.201800449
|3 Volltext
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