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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201705540
|2 doi
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|a pubmed24n0940.xml
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|a (DE-627)NLM282283765
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|a (NLM)29572972
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Cho, Kyungjune
|e verfasserin
|4 aut
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|a Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Although 2D molybdenum disulfide (MoS2 ) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high-performance 2D MoS2 -based devices. In this regard, many studies have been conducted to improve the carrier-injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time-consuming and low-yield transfer processes on sub-micrometer MoS2 flakes. Here, a simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS2 channels. The selectively deposited thiol-molecules via the vapor-deposition process provide additional tunneling paths at the contact regions, improving the carrier-injection properties with lower activation energies in MoS2 field-effect transistors. Additionally, by inserting thiol-molecules at the only one contact region, asymmetric carrier-injection is feasible depending on the temperature and gate bias
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|a Journal Article
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|a MoS2
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|a charge injection
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|a contact engineering
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4 |
|a electrical transport
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4 |
|a thiol-molecules
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| 700 |
1 |
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|a Pak, Jinsu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jae-Keun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Keehoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Tae-Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shin, Jiwon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Choi, Barbara Yuri
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chung, Seungjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Takhee
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 18 vom: 23. Mai, Seite e1705540
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:18
|g day:23
|g month:05
|g pages:e1705540
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|u http://dx.doi.org/10.1002/adma.201705540
|3 Volltext
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