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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201706023
|2 doi
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|a pubmed24n0938.xml
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|a (DE-627)NLM281427135
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|a (NLM)29484722
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yang, Guang
|e verfasserin
|4 aut
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|a Effective Carrier-Concentration Tuning of SnO2 Quantum Dot Electron-Selective Layers for High-Performance Planar Perovskite Solar Cells
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|c 2018
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The carrier concentration of the electron-selective layer (ESL) and hole-selective layer can significantly affect the performance of organic-inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two-step method, i.e., room-temperature colloidal synthesis and low-temperature removal of additive (thiourea), to control the carrier concentration of SnO2 quantum dot (QD) ESLs to achieve high-performance PSCs is developed. By optimizing the electron density of SnO2 QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH3 NH3 PbI3 absorber is achieved. The superior uniformity of low-temperature processed SnO2 QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm2 and 16.97% efficiency flexible device. The results demonstrate the promise of carrier-concentration-controlled SnO2 QD ESLs for fabricating stable, efficient, reproducible, large-scale, and flexible planar PSCs
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|a Journal Article
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|a SnO2 QD
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|a carrier concentration
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|a flexible
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|a large-scale
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|a planar perovskite solar cells
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|a Chen, Cong
|e verfasserin
|4 aut
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|a Yao, Fang
|e verfasserin
|4 aut
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|a Chen, Zhiliang
|e verfasserin
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|a Zhang, Qi
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|4 aut
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|a Zheng, Xiaolu
|e verfasserin
|4 aut
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|a Ma, Junjie
|e verfasserin
|4 aut
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|a Lei, Hongwei
|e verfasserin
|4 aut
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|a Qin, Pingli
|e verfasserin
|4 aut
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|a Xiong, Liangbin
|e verfasserin
|4 aut
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|a Ke, Weijun
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|4 aut
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|a Li, Gang
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|a Yan, Yanfa
|e verfasserin
|4 aut
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|a Fang, Guojia
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 14 vom: 15. Apr., Seite e1706023
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:14
|g day:15
|g month:04
|g pages:e1706023
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|u http://dx.doi.org/10.1002/adma.201706023
|3 Volltext
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