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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201705516
|2 doi
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|a pubmed24n0936.xml
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|a (DE-627)NLM280950233
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|a (NLM)29436029
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhu, Changrong
|e verfasserin
|4 aut
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|a In Situ Grown Epitaxial Heterojunction Exhibits High-Performance Electrocatalytic Water Splitting
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Electrocatalytic performance can be enhanced by engineering a purposely designed nanoheterojunction and fine-tuning the interface electronic structure. Herein a new approach of developing atomic epitaxial in-growth in Co-Ni3 N nanowires array is devised, where a nanoconfinement effect is reinforced at the interface. The Co-Ni3 N heterostructure array is formed by thermal annealing NiCo2 O4 precursor nanowires under an optimized condition, during which the nanowire morphology is retained. The epitaxial in-growth structure of Co-Ni3 N at nanometer scale facilitates the electron transfer between the two different domains at the epitaxial interface, leading to a significant enhancement in catalytic activities for both hydrogen and oxygen evolution reactions (10 and 16 times higher in the respective turn-over frequency compared to Ni3 N-alone nanorods). The interface transfer effect is verified by electronic binding energy shift and density functional theory (DFT) calculations. This nanoconfinement effect occurring during in situ atomic epitaxial in-growth of the two compatible materials shows an effective pathway toward high-performance electrocatalysis and energy storages
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|a Journal Article
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|a epitaxial in-growth
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|a hydrogen evolution reaction
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|a metal nitride arrays
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|a nanoconfinement
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|a oxygen evolution reaction
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|a Wang, An-Liang
|e verfasserin
|4 aut
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|a Xiao, Wen
|e verfasserin
|4 aut
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1 |
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|a Chao, Dongliang
|e verfasserin
|4 aut
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1 |
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|a Zhang, Xiao
|e verfasserin
|4 aut
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1 |
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|a Tiep, Nguyen Huy
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Shi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Jiani
|e verfasserin
|4 aut
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|a Wang, Xin
|e verfasserin
|4 aut
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| 700 |
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|a Ding, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, John
|e verfasserin
|4 aut
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|a Zhang, Hua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fan, Hong Jin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 13 vom: 03. März, Seite e1705516
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:13
|g day:03
|g month:03
|g pages:e1705516
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|u http://dx.doi.org/10.1002/adma.201705516
|3 Volltext
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