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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201707164
|2 doi
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|a pubmed24n0936.xml
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|a eng
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|a Wang, Yang
|e verfasserin
|4 aut
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|a High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers
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|c 2018
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 01.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 105 g mol-1 . Furthermore, by sp2 -nitrogen atoms (sp2 -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp2 -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp2 -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO2 substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm2 V-1 s-1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈107 is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers
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|a Journal Article
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|a high-molecular-weight semiconducting polymers
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|a n-type transistors
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|a self-assembled monolayers
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|a sp2-nitrogen-atom substitution
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|a Hasegawa, Tsukasa
|e verfasserin
|4 aut
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1 |
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|a Matsumoto, Hidetoshi
|e verfasserin
|4 aut
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|a Mori, Takehiko
|e verfasserin
|4 aut
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|a Michinobu, Tsuyoshi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 13 vom: 11. März, Seite e1707164
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|x 1521-4095
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|g volume:30
|g year:2018
|g number:13
|g day:11
|g month:03
|g pages:e1707164
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|u http://dx.doi.org/10.1002/adma.201707164
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