Retreat from Stress : Rattling in a Planar Coordination

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 13 vom: 15. März, Seite e1706230
1. Verfasser: Suekuni, Koichiro (VerfasserIn)
Weitere Verfasser: Lee, Chul Ho, Tanaka, Hiromi I, Nishibori, Eiji, Nakamura, Atsushi, Kasai, Hidetaka, Mori, Hitoshi, Usui, Hidetomo, Ochi, Masayuki, Hasegawa, Takumi, Nakamura, Mitsutaka, Ohira-Kawamura, Seiko, Kikuchi, Tatsuya, Kaneko, Koji, Nishiate, Hirotaka, Hashikuni, Katsuaki, Kosaka, Yasufumi, Kuroki, Kazuhiko, Takabatake, Toshiro
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article X-ray diffraction neutron scattering rattling tetrahedrites thermoelectric materials
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520 |a Thermoelectric devices convert heat flow to charge flow, providing electricity. Materials for highly efficient devices must satisfy conflicting requirements of high electrical conductivity and low thermal conductivity. Thermal conductivity in caged compounds is known to be suppressed by a large vibration of guest atoms, so-called rattling, which effectively scatters phonons. Here, the crystal structure and phonon dynamics of tetrahedrites (Cu,Zn)12 (Sb,As)4 S13 are studied. The results reveal that the Cu atoms in a planar coordination are rattling. In contrast to caged compounds, chemical pressure enlarges the amplitude of the rattling vibration in the tetrahedrites so that the rattling atom is squeezed out of the planar coordination. Furthermore, the rattling vibration shakes neighbors through lone pairs of the metalloids, Sb and As, which is responsible for the low thermal conductivity of tetrahedrites. These findings provide a new strategy for the development of highly efficient thermoelectric materials with planar coordination 
650 4 |a Journal Article 
650 4 |a X-ray diffraction 
650 4 |a neutron scattering 
650 4 |a rattling 
650 4 |a tetrahedrites 
650 4 |a thermoelectric materials 
700 1 |a Lee, Chul Ho  |e verfasserin  |4 aut 
700 1 |a Tanaka, Hiromi I  |e verfasserin  |4 aut 
700 1 |a Nishibori, Eiji  |e verfasserin  |4 aut 
700 1 |a Nakamura, Atsushi  |e verfasserin  |4 aut 
700 1 |a Kasai, Hidetaka  |e verfasserin  |4 aut 
700 1 |a Mori, Hitoshi  |e verfasserin  |4 aut 
700 1 |a Usui, Hidetomo  |e verfasserin  |4 aut 
700 1 |a Ochi, Masayuki  |e verfasserin  |4 aut 
700 1 |a Hasegawa, Takumi  |e verfasserin  |4 aut 
700 1 |a Nakamura, Mitsutaka  |e verfasserin  |4 aut 
700 1 |a Ohira-Kawamura, Seiko  |e verfasserin  |4 aut 
700 1 |a Kikuchi, Tatsuya  |e verfasserin  |4 aut 
700 1 |a Kaneko, Koji  |e verfasserin  |4 aut 
700 1 |a Nishiate, Hirotaka  |e verfasserin  |4 aut 
700 1 |a Hashikuni, Katsuaki  |e verfasserin  |4 aut 
700 1 |a Kosaka, Yasufumi  |e verfasserin  |4 aut 
700 1 |a Kuroki, Kazuhiko  |e verfasserin  |4 aut 
700 1 |a Takabatake, Toshiro  |e verfasserin  |4 aut 
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