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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201706573
|2 doi
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|a eng
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| 100 |
1 |
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|a Jun, Taehwan
|e verfasserin
|4 aut
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|a Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I
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|c 2018
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n-type TAS materials with excellent performance, such as amorphous In-Ga-Zn-O (a-IGZO), are already known, no complementary p-type TAS has been realized to date. Here, a material design concept for p-type TAS materials is proposed utilizing the pseudo s-orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn-containing CuI (a-CuSnI) thin film is reported as an example. The resulting a-CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm2 V-1 s-1 is obtained, which is comparable with that of conventional n-type TAS
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|a Journal Article
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|a amorphous p-type Cu-Sn-I semiconductors
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|a flexible electronics
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|a material design
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4 |
|a solution process
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1 |
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|a Kim, Junghwan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sasase, Masato
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hosono, Hideo
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 12 vom: 30. März, Seite e1706573
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:30
|g year:2018
|g number:12
|g day:30
|g month:03
|g pages:e1706573
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201706573
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