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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201704839
|2 doi
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|a pubmed24n0932.xml
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|a (DE-627)NLM279815026
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|a (NLM)29318672
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Qi, Yue
|e verfasserin
|4 aut
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| 245 |
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|a Switching Vertical to Horizontal Graphene Growth Using Faraday Cage-Assisted PECVD Approach for High-Performance Transparent Heating Device
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics
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|a Journal Article
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|a Faraday cages
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|a laid-down graphene
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|a plasma-enhanced chemical vapor deposition
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|a vertical graphene
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|a Deng, Bing
|e verfasserin
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|a Guo, Xiao
|e verfasserin
|4 aut
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|a Chen, Shulin
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|a Gao, Jing
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|a Li, Tianran
|e verfasserin
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|a Dou, Zhipeng
|e verfasserin
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|a Ci, Haina
|e verfasserin
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|a Sun, Jingyu
|e verfasserin
|4 aut
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|a Chen, Zhaolong
|e verfasserin
|4 aut
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|a Wang, Ruoyu
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|4 aut
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|a Cui, Lingzhi
|e verfasserin
|4 aut
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|a Chen, Xudong
|e verfasserin
|4 aut
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|a Chen, Ke
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|4 aut
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|a Wang, Huihui
|e verfasserin
|4 aut
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|a Wang, Sheng
|e verfasserin
|4 aut
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|a Gao, Peng
|e verfasserin
|4 aut
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|a Rummeli, Mark H
|e verfasserin
|4 aut
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|a Peng, Hailin
|e verfasserin
|4 aut
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|a Zhang, Yanfeng
|e verfasserin
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|a Liu, Zhongfan
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 8 vom: 21. Feb.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:8
|g day:21
|g month:02
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|u http://dx.doi.org/10.1002/adma.201704839
|3 Volltext
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