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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201705243
|2 doi
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|a pubmed24n0932.xml
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|a (DE-627)NLM279814976
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|a (NLM)29318665
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Cheng, Pei
|e verfasserin
|4 aut
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|a Ternary System with Controlled Structure
|b A New Strategy toward Efficient Organic Photovoltaics
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Recently, a new type of active layer with a ternary system has been developed to further enhance the performance of binary system organic photovoltaics (OPV). In the ternary OPV, almost all active layers are formed by simple ternary blend in solution, which eventually leads to the disordered bulk heterojunction (BHJ) structure after a spin-coating process. There are two main restrictions in this disordered BHJ structure to obtain higher performance OPV. One is the isolated second donor or acceptor domains. The other is the invalid metal-semiconductor contact. Herein, the concept and design of donor/acceptor/acceptor ternary OPV with more controlled structure (C-ternary) is reported. The C-ternary OPV is fabricated by a sequential solution process, in which the second acceptor and donor/acceptor binary blend are sequentially spin-coated. After the device optimization, the power conversion efficiencies (PCEs) of all OPV with C-ternary are enhanced by 14-21% relative to those with the simple ternary blend; the best PCEs are 10.7 and 11.0% for fullerene-based and fullerene-free solar cells, respectively. Moreover, the averaged PCE value of 10.4% for fullerene-free solar cell measured in this study is in great agreement with the certified one of 10.32% obtained from Newport Corporation
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|a Journal Article
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|a non-fullerene
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|a organic photovoltaics
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|a organic solar cells
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|a sequential process
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|a ternary
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|a Wang, Rui
|e verfasserin
|4 aut
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1 |
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|a Zhu, Jingshuai
|e verfasserin
|4 aut
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1 |
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|a Huang, Wenchao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chang, Sheng-Yung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Meng, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Pengyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Hao-Wen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qin, Meng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Chenhui
|e verfasserin
|4 aut
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1 |
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|a Zhan, Xiaowei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Yang
|e verfasserin
|4 aut
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| 773 |
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8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 8 vom: 15. Feb.
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|g volume:30
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|u http://dx.doi.org/10.1002/adma.201705243
|3 Volltext
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