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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201704479
|2 doi
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|a pubmed24n0932.xml
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|a (DE-627)NLM279787243
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|a (NLM)29315852
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yang, Yongqiang
|e verfasserin
|4 aut
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|a An Unusual Strong Visible-Light Absorption Band in Red Anatase TiO2 Photocatalyst Induced by Atomic Hydrogen-Occupied Oxygen Vacancies
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Increasing visible light absorption of classic wide-bandgap photocatalysts like TiO2 has long been pursued in order to promote solar energy conversion. Modulating the composition and/or stoichiometry of these photocatalysts is essential to narrow their bandgap for a strong visible-light absorption band. However, the bands obtained so far normally suffer from a low absorbance and/or narrow range. Herein, in contrast to the common tail-like absorption band in hydrogen-free oxygen-deficient TiO2 , an unusual strong absorption band spanning the full spectrum of visible light is achieved in anatase TiO2 by intentionally introducing atomic hydrogen-mediated oxygen vacancies. Combining experimental characterizations with theoretical calculations reveals the excitation of a new subvalence band associated with atomic hydrogen filled oxygen vacancies as the origin of such band, which subsequently leads to active photo-electrochemical water oxidation under visible light. These findings could provide a powerful way of tailoring wide-bandgap semiconductors to fully capture solar light
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|a Journal Article
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|a atomic hydrogen
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|a oxygen vacancies
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|a photocatalysts
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|a red TiO2
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|a visible light
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|a Yin, Li-Chang
|e verfasserin
|4 aut
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1 |
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|a Gong, Yue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Niu, Ping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jian-Qiang
|e verfasserin
|4 aut
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|a Gu, Lin
|e verfasserin
|4 aut
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|a Chen, Xingqiu
|e verfasserin
|4 aut
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|a Liu, Gang
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Lianzhou
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Hui-Ming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 6 vom: 09. Feb.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:6
|g day:09
|g month:02
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|u http://dx.doi.org/10.1002/adma.201704479
|3 Volltext
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