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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201704882
|2 doi
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|a pubmed24n0932.xml
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|a (DE-627)NLM279787219
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|a (NLM)29315851
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Ruili
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Highly Efficient Inverted Structural Quantum Dot Solar Cells
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Highly efficient PbS colloidal quantum dot (QD) solar cells based on an inverted structure have been missing for a long time. The bottlenecks are the construction of an effective p-n heterojunction at the illumination side with smooth band alignment and the absence of serious interface carrier recombination. Here, solution-processed nickel oxide (NiO) as the p-type layer and lead sulfide (PbS) QDs with iodide ligand as the n-type layer are explored to build a p-n heterojunction at the illumination side. The large depletion region in the QD layer at the illumination side leads to high photocurrent. Interface carrier recombination at the interface is effectively prohibited by inserting a layer of slightly doped p-type QDs with 1,2-ethanedithiol as ligands, leading to improved voltage of the device. Based on this graded device structure design, the efficiency of inverted structural heterojunction PbS QD solar cells is improved to 9.7%, one time higher than the highest efficiency achieved before
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|a Journal Article
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4 |
|a band alignment
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4 |
|a colloidal quantum dots
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| 650 |
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4 |
|a inverted structural solar cells
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| 650 |
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4 |
|a photovoltaic devices
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| 700 |
1 |
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|a Wu, Xun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Kaimin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Wenjia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shang, Yuequn
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Haoying
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ning, Zhijun
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 7 vom: 09. Feb.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:30
|g year:2018
|g number:7
|g day:09
|g month:02
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|u http://dx.doi.org/10.1002/adma.201704882
|3 Volltext
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