Deformable Organic Nanowire Field-Effect Transistors

Deformable Organic Nanowire Field-Effect Transistors

© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 30(2018), 7 vom: 09. Feb.
1. Verfasser: Lee, Yeongjun (VerfasserIn)
Weitere Verfasser: Oh, Jin Young, Kim, Taeho Roy, Gu, Xiaodan, Kim, Yeongin, Wang, Ging-Ji Nathan, Wu, Hung-Chin, Pfattner, Raphael, To, John W F, Katsumata, Toru, Son, Donghee, Kang, Jiheong, Matthews, James R, Niu, Weijun, He, Mingqian, Sinclair, Robert, Cui, Yi, Tok, Jeffery B-H, Lee, Tae-Woo, Bao, Zhenan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2018
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article biomedical electronics deformable electronics nanowire electronics nanowire transistors stretchable transistors
LEADER 01000naa a22002652 4500
001 NLM279787162
003 DE-627
005 20231225023823.0
007 cr uuu---uuuuu
008 231225s2018 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201704401  |2 doi 
028 5 2 |a pubmed24n0932.xml 
035 |a (DE-627)NLM279787162 
035 |a (NLM)29315845 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Lee, Yeongjun  |e verfasserin  |4 aut 
245 1 0 |a Deformable Organic Nanowire Field-Effect Transistors 
264 1 |c 2018 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 01.08.2018 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm2 V-1 s-1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min-1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications 
650 4 |a Journal Article 
650 4 |a biomedical electronics 
650 4 |a deformable electronics 
650 4 |a nanowire electronics 
650 4 |a nanowire transistors 
650 4 |a stretchable transistors 
700 1 |a Oh, Jin Young  |e verfasserin  |4 aut 
700 1 |a Kim, Taeho Roy  |e verfasserin  |4 aut 
700 1 |a Gu, Xiaodan  |e verfasserin  |4 aut 
700 1 |a Kim, Yeongin  |e verfasserin  |4 aut 
700 1 |a Wang, Ging-Ji Nathan  |e verfasserin  |4 aut 
700 1 |a Wu, Hung-Chin  |e verfasserin  |4 aut 
700 1 |a Pfattner, Raphael  |e verfasserin  |4 aut 
700 1 |a To, John W F  |e verfasserin  |4 aut 
700 1 |a Katsumata, Toru  |e verfasserin  |4 aut 
700 1 |a Son, Donghee  |e verfasserin  |4 aut 
700 1 |a Kang, Jiheong  |e verfasserin  |4 aut 
700 1 |a Matthews, James R  |e verfasserin  |4 aut 
700 1 |a Niu, Weijun  |e verfasserin  |4 aut 
700 1 |a He, Mingqian  |e verfasserin  |4 aut 
700 1 |a Sinclair, Robert  |e verfasserin  |4 aut 
700 1 |a Cui, Yi  |e verfasserin  |4 aut 
700 1 |a Tok, Jeffery B-H  |e verfasserin  |4 aut 
700 1 |a Lee, Tae-Woo  |e verfasserin  |4 aut 
700 1 |a Bao, Zhenan  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 30(2018), 7 vom: 09. Feb.  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:30  |g year:2018  |g number:7  |g day:09  |g month:02 
856 4 0 |u http://dx.doi.org/10.1002/adma.201704401  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 30  |j 2018  |e 7  |b 09  |c 02