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231225s2018 xx |||||o 00| ||eng c |
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7 |
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|a 10.1002/adma.201704796
|2 doi
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|a pubmed24n0931.xml
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|a (DE-627)NLM279351828
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|a (NLM)29271505
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Chiu, Kuan-Chang
|e verfasserin
|4 aut
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| 245 |
1 |
0 |
|a Synthesis of In-Plane Artificial Lattices of Monolayer Multijunctions
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| 264 |
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1 |
|c 2018
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 01.08.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Recently, monolayers of van der Waals materials, including transition metal dichalcogenides (TMDs), are considered ideal building blocks for constructing 2D artificial lattices and heterostructures. Heterostructures with multijunctions of more than two monolayer TMDs are intriguing for exploring new physics and materials properties. Obtaining in-plane heterojunctions of monolayer TMDs with atomically sharp interfaces is very significant for fundamental research and applications. Currently, multistep synthesis for more than two monolayer TMDs remains a challenge because decomposition or compositional alloying is thermodynamically favored at the high growth temperature. Here, a multistep chemical vapor deposition (CVD) synthesis of the in-plane multijunctions of monolayer TMDs is presented. A low growth temperature synthesis is developed to avoid compositional fluctuations of as-grown TMDs, defects formations, and interfacial alloying for high heterointerface quality and thermal stability of monolayer TMDs. With optimized parameters, atomically sharp interfaces are successfully achieved in the synthesis of in-plane artificial lattices of the WS2 /WSe2 /MoS2 at reduced growth temperatures. Growth behaviors as well as the heterointerface quality are carefully studied in varying growth parameters. Highly oriented strain patterns are found in the second harmonic generation imaging of the TMD multijunctions, suggesting that the in-plane heteroepitaxial growth may induce distortion for unique material symmetry
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4 |
|a Journal Article
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4 |
|a 2D materials
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4 |
|a edge epitaxy
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| 650 |
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4 |
|a heterostructures
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4 |
|a monolayers
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| 650 |
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4 |
|a transition metal dichalcogenides (TMDs)
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| 700 |
1 |
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|a Huang, Kuan-Hua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Chun-An
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lai, Ying-Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xin-Quan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Erh-Chen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chuang, Meng-Hsi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Jenn-Ming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Yi-Hsien
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 7 vom: 05. Feb.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:30
|g year:2018
|g number:7
|g day:05
|g month:02
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201704796
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 30
|j 2018
|e 7
|b 05
|c 02
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