High-Density Modification of H-Terminated Si(111) Surfaces Using Short-Chain Alkynes

H-Si(111)-terminated surfaces were alkenylated via two routes: through a novel one-step gas-phase hydrosilylation reaction with short alkynes (C3 to C6) and for comparison via a two-step chlorination and Grignard alkenylation process. All modified surfaces were characterized by static water contact...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 33(2017), 51 vom: 26. Dez., Seite 14599-14607
1. Verfasser: Pujari, Sidharam P (VerfasserIn)
Weitere Verfasser: Filippov, Alexei D, Gangarapu, Satesh, Zuilhof, Han
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
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520 |a H-Si(111)-terminated surfaces were alkenylated via two routes: through a novel one-step gas-phase hydrosilylation reaction with short alkynes (C3 to C6) and for comparison via a two-step chlorination and Grignard alkenylation process. All modified surfaces were characterized by static water contact angles and X-ray photoelectron spectroscopy (XPS). Propenyl- and butenyl-coated Si(111) surfaces display a significantly higher packing density than conventional C10-C18 alkyne-derived monolayers, showing the potential of this approach. In addition, propyne chemisorption proceeds via either of two approaches: the standard hydrosilylation at the terminal carbon (lin) at temperatures above 90 °C and an unprecedented reaction at the second carbon (iso) at temperatures below 90 °C. Molecular modeling revealed that the packing energy of a monolayer bonded at the second carbon is significantly more favorable, which drives iso-attachment, with a dense packing of surface-bound iso-propenyl chains at 40% surface coverage, in line with the experiments at <90 °C. The highest density monolayers are obtained at 130 °C and show a linear attachment of 1-propenyl chains with 92% surface coverage 
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700 1 |a Gangarapu, Satesh  |e verfasserin  |4 aut 
700 1 |a Zuilhof, Han  |e verfasserin  |4 aut 
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