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231225s2018 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201705270
|2 doi
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|a pubmed25n0928.xml
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|a (DE-627)NLM278441602
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|a (NLM)29178337
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Lim, Yi Rang
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Roll-to-Roll Production of Layer-Controlled Molybdenum Disulfide
|b A Platform for 2D Semiconductor-Based Industrial Applications
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|c 2018
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 01.08.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A facile methodology for the large-scale production of layer-controlled MoS2 layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll-to-roll-based thermal decomposition is developed. The resulting 50 cm long MoS2 layers synthesized on Ni foils possess excellent long-range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS2 layers by simply adjusting the concentration of (NH4 )2 MoS4 . Additionally, the capability of the MoS2 for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS2 -based field effect transistors exhibit unipolar n-channel transistor behavior with electron mobility of 0.6 cm2 V-1 s-1 and an on-off ratio of ≈10³. The MoS2 -based visible-light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W-1 . Moreover, the MoS2 layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec-1 . Based on these results, it is envisaged that the cost-effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor-based multifaceted applications
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|a Journal Article
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|a MoS2
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|a field effect transistors
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|a hydrogen evolution reaction
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|a photodetectors
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| 650 |
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|a roll-to-roll production
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|a Han, Jin Kyu
|e verfasserin
|4 aut
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1 |
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|a Kim, Seong Ku
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Young Bum
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yoon, Yeoheung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Seong Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Min, Bok Ki
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Yooseok
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jeon, Cheolho
|e verfasserin
|4 aut
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| 700 |
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|a Won, Sejeong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jae-Hyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Wooseok
|e verfasserin
|4 aut
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1 |
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|a Myung, Sung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Sun Sook
|e verfasserin
|4 aut
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|a An, Ki-Seok
|e verfasserin
|4 aut
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| 700 |
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|a Lim, Jongsun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 30(2018), 5 vom: 26. Feb.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:30
|g year:2018
|g number:5
|g day:26
|g month:02
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|u http://dx.doi.org/10.1002/adma.201705270
|3 Volltext
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