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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.7b02827
|2 doi
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|a pubmed24n0924.xml
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|a (DE-627)NLM277268303
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|a (NLM)29058446
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Jinkins, Katherine R
|e verfasserin
|4 aut
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| 245 |
1 |
0 |
|a Nanotube Alignment Mechanism in Floating Evaporative Self-Assembly
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| 264 |
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|c 2017
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 31.07.2018
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|a Date Revised 31.07.2018
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a The challenge of assembling semiconducting single-wall carbon nanotubes (s-SWCNTs) into densely packed, aligned arrays has limited the scalability and practicality of high-performance nanotube-based electronics technologies. The aligned deposition of s-SWCNTs via floating evaporative self-assembly (FESA) has promise for overcoming this challenge; however, the mechanisms behind FESA need to be elucidated before the technique can be improved and scaled. Here, we gain a deeper understanding of the FESA process by studying a stationary analogue of FESA and optically tracking the dynamics of the organic ink/water/substrate and ink/air/substrate interfaces during the typical FESA process. We observe that the ink/water interface serves to collect and confine the s-SWCNTs before alignment and that the deposition of aligned bands of s-SWCNTs occurs at the ink/water/substrate contact line during the depinning of both the ink/air/substrate and ink/water/substrate contact lines. We also demonstrate improved control over the interband spacing, bandwidth, and packing density of FESA-aligned s-SWCNT arrays. The substrate lift rate (5-15 mm min-1) is used to tailor the interband spacing from 90 to 280 μm while maintaining a constant aligned s-SWCNT bandwidth of 50 μm. Varying the s-SWCNT ink concentration (0.75-10 μg mL-1) allows the control of the bandwidth from 2.5 to 45 μm. A steep increase in packing density is observed from 11 s-SWCNTs μm-1 at 0.75 μg mL-1 to 20 s-SWCNTs μm-1 at 2 μg mL-1, with a saturated packing density of ∼24 s-SWCNTs μm-1. We also demonstrate the scaling of FESA to align s-SWCNTs on a 2.5 × 2.5 cm2 scale while preserving high-quality alignment on the nanometer scale. These findings help realize the scalable fabrication of well-aligned s-SWCNT arrays to serve as large-area platforms for next-generation semiconductor electronics
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|a Journal Article
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| 650 |
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4 |
|a Research Support, U.S. Gov't, Non-P.H.S.
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| 700 |
1 |
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|a Chan, Jason
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Brady, Gerald J
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gronski, Kjerstin K
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gopalan, Padma
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Evensen, Harold T
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Berson, Arganthaël
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Arnold, Michael S
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 33(2017), 46 vom: 21. Nov., Seite 13407-13414
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
8 |
|g volume:33
|g year:2017
|g number:46
|g day:21
|g month:11
|g pages:13407-13414
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| 856 |
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|u http://dx.doi.org/10.1021/acs.langmuir.7b02827
|3 Volltext
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|a AR
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|d 33
|j 2017
|e 46
|b 21
|c 11
|h 13407-13414
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