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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201703628
|2 doi
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|a pubmed24n0924.xml
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|a (NLM)29057574
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|e rakwb
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|a eng
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|a Wang, Meng
|e verfasserin
|4 aut
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|a Electric-Field-Controlled Phase Transformation in WO3 Thin Films through Hydrogen Evolution
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Field-effect transistors with ionic-liquid gating (ILG) have been widely employed and have led to numerous intriguing phenomena in the last decade, due to the associated excellent carrier-density tunability. However, the role of the electrochemical effect during ILG has become a heavily debated topic recently. Herein, using ILG, a field-induced insulator-to-metal transition is achieved in WO3 thin films with the emergence of structural transformations of the whole films. The subsequent secondary-ion mass spectrometry study provides solid evidence that electrochemically driven hydrogen evolution dominates the discovered electrical and structural transformation through surface absorption and bulk intercalation
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|a Journal Article
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|a WO3
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|a hydrogen evolution
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|a ionic-liquid gating
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|a phase transformation
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|a Shen, Shengchun
|e verfasserin
|4 aut
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|a Ni, Jinyang
|e verfasserin
|4 aut
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1 |
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|a Lu, Nianpeng
|e verfasserin
|4 aut
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|a Li, Zhuolu
|e verfasserin
|4 aut
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|a Li, Hao-Bo
|e verfasserin
|4 aut
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|a Yang, Shuzhen
|e verfasserin
|4 aut
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1 |
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|a Chen, Tianzhe
|e verfasserin
|4 aut
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|a Guo, Jingwen
|e verfasserin
|4 aut
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|a Wang, Yujia
|e verfasserin
|4 aut
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|a Xiang, Hongjun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Pu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 46 vom: 02. Dez.
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
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|g month:12
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|u http://dx.doi.org/10.1002/adma.201703628
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