|
|
|
|
LEADER |
01000naa a22002652 4500 |
001 |
NLM277134048 |
003 |
DE-627 |
005 |
20231225013527.0 |
007 |
cr uuu---uuuuu |
008 |
231225s2017 xx |||||o 00| ||eng c |
024 |
7 |
|
|a 10.1002/adma.201702917
|2 doi
|
028 |
5 |
2 |
|a pubmed24n0923.xml
|
035 |
|
|
|a (DE-627)NLM277134048
|
035 |
|
|
|a (NLM)29044833
|
040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
041 |
|
|
|a eng
|
100 |
1 |
|
|a Tan, Haijie
|e verfasserin
|4 aut
|
245 |
1 |
0 |
|a Lateral Graphene-Contacted Vertically Stacked WS2 /MoS2 Hybrid Photodetectors with Large Gain
|
264 |
|
1 |
|c 2017
|
336 |
|
|
|a Text
|b txt
|2 rdacontent
|
337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
500 |
|
|
|a Date Completed 18.07.2018
|
500 |
|
|
|a Date Revised 01.10.2020
|
500 |
|
|
|a published: Print-Electronic
|
500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
520 |
|
|
|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
520 |
|
|
|a A demonstration is presented of how significant improvements in all-2D photodetectors can be achieved by exploiting the type-II band alignment of vertically stacked WS2 /MoS2 semiconducting heterobilayers and finite density of states of graphene electrodes. The photoresponsivity of WS2 /MoS2 heterobilayer devices is increased by more than an order of magnitude compared to homobilayer devices and two orders of magnitude compared to monolayer devices of WS2 and MoS2 , reaching 103 A W-1 under an illumination power density of 1.7 × 102 mW cm-2 . The massive improvement in performance is due to the strong Coulomb interaction between WS2 and MoS2 layers. The efficient charge transfer at the WS2 /MoS2 heterointerface and long trapping time of photogenerated charges contribute to the observed large photoconductive gain of ≈3 × 104 . Laterally spaced graphene electrodes with vertically stacked 2D van der Waals heterostructures are employed for making high-performing ultrathin photodetectors
|
650 |
|
4 |
|a Journal Article
|
650 |
|
4 |
|a MoS2
|
650 |
|
4 |
|a WS2
|
650 |
|
4 |
|a charge transfer
|
650 |
|
4 |
|a heterostructures
|
650 |
|
4 |
|a photodetectors
|
700 |
1 |
|
|a Xu, Wenshuo
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Sheng, Yuewen
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Lau, Chit Siong
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Fan, Ye
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Chen, Qu
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Tweedie, Martin
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Wang, Xiaochen
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Zhou, Yingqiu
|e verfasserin
|4 aut
|
700 |
1 |
|
|a Warner, Jamie H
|e verfasserin
|4 aut
|
773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 46 vom: 21. Dez.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
773 |
1 |
8 |
|g volume:29
|g year:2017
|g number:46
|g day:21
|g month:12
|
856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.201702917
|3 Volltext
|
912 |
|
|
|a GBV_USEFLAG_A
|
912 |
|
|
|a SYSFLAG_A
|
912 |
|
|
|a GBV_NLM
|
912 |
|
|
|a GBV_ILN_350
|
951 |
|
|
|a AR
|
952 |
|
|
|d 29
|j 2017
|e 46
|b 21
|c 12
|