High-Performance Inorganic Perovskite Quantum Dot-Organic Semiconductor Hybrid Phototransistors

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 44 vom: 01. Nov.
1. Verfasser: Chen, Yantao (VerfasserIn)
Weitere Verfasser: Chu, Yingli, Wu, Xiaohan, Ou-Yang, Wei, Huang, Jia
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article inorganic lead halide perovskite organic semiconductors photodetectors phototransistors quantum dots
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
All-inorganic lead halide perovskite quantum dots (IHP QDs) have great potentials in photodetectors. However, the photoresponsivity is limited by the low charge transport efficiency of the IHP QD layers. High-performance phototransistors based on IHP QDs hybridized with organic semiconductors (OSCs) are developed. The smooth surface of IHP QD layers ensures ordered packing of the OSC molecules above them. The OSCs significantly improve the transportation of the photoexcited charges, and the gate effect of the transistor structure significantly enhances the photoresponsivity while simultaneously maintaining high Iphoto /Idark ratio. The devices exhibit outstanding optoelectronic properties in terms of photoresponsivity (1.7 × 104 A W-1 ), detectivity (2.0 × 1014 Jones), external quantum efficiency (67000%), Iphoto /Idark ratio (8.1 × 104 ), and stability (100 d in air). The overall performances of our devices are superior to state-of-the-art IHP photodetectors. The strategy utilized here is general and can be easily applied to many other perovskite photodetectors
Beschreibung:Date Completed 18.07.2018
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201704062