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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201702001
|2 doi
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|a pubmed24n0923.xml
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|a (DE-627)NLM276930657
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|a (NLM)29024168
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Lingfei
|e verfasserin
|4 aut
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| 245 |
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|a Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases
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|a Journal Article
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|a electronic reconstruction
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|a ferroelectricity
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4 |
|a quantum tunneling
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|a terrace edges
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|a ultrathin oxide films
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1 |
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|a Kim, Rokyeon
|e verfasserin
|4 aut
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1 |
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|a Kim, Yoonkoo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Choong H
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hwang, Sangwoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cho, Myung Rae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shin, Yeong Jae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Das, Saikat
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jeong Rae
|e verfasserin
|4 aut
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1 |
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|a Kalinin, Sergei V
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Miyoung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Sang Mo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Noh, Tae Won
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 44 vom: 01. Nov.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:44
|g day:01
|g month:11
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|u http://dx.doi.org/10.1002/adma.201702001
|3 Volltext
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