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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201703256
|2 doi
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|a pubmed24n0922.xml
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|a (NLM)28991384
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|a DE-627
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|e rakwb
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|a eng
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|a Hu, Wei
|e verfasserin
|4 aut
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|a High-Performance Flexible Photodetectors based on High-Quality Perovskite Thin Films by a Vapor-Solution Method
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Organometal halide perovskites are new light-harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low-temperature process capability. However, the preparation of high-quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor-solution method is developed to achieve uniform and pinhole-free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as-prepared high-quality perovskite thin films, high-performance flexible photodetectors (PDs) are constructed, which display a nR value of 81 A W-1 at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin-film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high-quality perovskite thin films opens up a new avenue to develop high-performance flexible optoelectronic devices
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|a Journal Article
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|a flexible perovskite photodetectors
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|a organometal halide perovskites
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|a thin-film photodetectors
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|a Huang, Wei
|e verfasserin
|4 aut
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|a Yang, Shuzhen
|e verfasserin
|4 aut
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|a Wang, Xiao
|e verfasserin
|4 aut
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|a Jiang, Zhenyu
|e verfasserin
|4 aut
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|a Zhu, Xiaoli
|e verfasserin
|4 aut
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|a Zhou, Hong
|e verfasserin
|4 aut
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|a Liu, Hongjun
|e verfasserin
|4 aut
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|a Zhang, Qinglin
|e verfasserin
|4 aut
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|a Zhuang, Xiujuan
|e verfasserin
|4 aut
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|a Yang, Junliang
|e verfasserin
|4 aut
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|a Kim, Dong Ha
|e verfasserin
|4 aut
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|a Pan, Anlian
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 43 vom: 11. Nov.
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
|g number:43
|g day:11
|g month:11
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|u http://dx.doi.org/10.1002/adma.201703256
|3 Volltext
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