Ab Initio Studies of the Diffusion of Intrinsic Defects and Silicon Dopants in Bulk InAs
We expose the predominant diffusional pathways for In and As in InAs, as well as dopant Si atoms in InAs, using Nudged Elastic Band calculations in conjunction with accurate Density Functional Theory calculations of the energy of defective systems. Our results show that As is a very fast diffuser co...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 33(2017), 42 vom: 24. Okt., Seite 11484-11489
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| 1. Verfasser: |
Reveil, Mardochee
(VerfasserIn) |
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| Weitere Verfasser: |
Huang, Hsien-Lien,
Chen, Huang-Ta,
Liu, Jason,
Thompson, Michael O,
Clancy, Paulette |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2017
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article
Research Support, U.S. Gov't, Non-P.H.S.
Research Support, Non-U.S. Gov't |
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