Local structure around In atoms in coherently grown m-plane InGaN film

The local structure around In atoms in an m-plane In0.06Ga0.94N film coherently grown on a freestanding m-plane GaN substrate was investigated by polarization-dependent X-ray absorption fine-structure. A step-by-step fitting procedure was proposed for the m-plane wurtzite structure. The interatomic...

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Publié dans:	Journal of synchrotron radiation. - 1994. - 24(2017), Pt 5 vom: 01. Sept., Seite 1012-1016
Auteur principal:	Miyanaga, Takafumi (Auteur)
Autres auteurs:	Azuhata, Takashi, Nitta, Kiyofumi, Chichibu, Shigefusa F
Format:	Article en ligne
Langue:	English
Publié:	2017
Accès à la collection:	Journal of synchrotron radiation
Sujets:	Journal Article InGaN XAFS local structure m-plane step-by-step fitting procedure