|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM275186229 |
| 003 |
DE-627 |
| 005 |
20231225005120.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231225s2017 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.201606433
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n0917.xml
|
| 035 |
|
|
|a (DE-627)NLM275186229
|
| 035 |
|
|
|a (NLM)28845903
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Qu, Deshun
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Carrier-Type Modulation and Mobility Improvement of Thin MoTe2
|
| 264 |
|
1 |
|c 2017
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Completed 18.07.2018
|
| 500 |
|
|
|a Date Revised 30.09.2020
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
| 520 |
|
|
|a A systematic modulation of the carrier type in molybdenum ditelluride (MoTe2 ) field-effect transistors (FETs) is described, through rapid thermal annealing (RTA) under a controlled O2 environment (p-type modulation) and benzyl viologen (BV) doping (n-type modulation). Al2 O3 capping is then introduced to improve the carrier mobilities and device stability. MoTe2 is found to be ultrasensitive to O2 at elevated temperatures (250 °C). Charge carriers of MoTe2 flakes annealed via RTA at various vacuum levels are tuned between predominantly pristine n-type ambipolar, symmetric ambipolar, unipolar p-type, and degenerate-like p-type. Changes in the MoTe2 -transistor performance are confirmed to originate from the physical and chemical absorption and dissociation of O2 , especially at tellurium vacancy sites. The electron branch is modulated by varying the BV dopant concentrations and annealing conditions. Unipolar n-type MoTe2 FETs with a high on-off ratio exceeding 106 are achieved under optimized doping conditions. By introducing Al2 O3 capping, carrier field effect mobilities (41 for holes and 80 cm2 V-1 s-1 for electrons) and device stability are improved due to the reduced trap densities and isolation from ambient air. Lateral MoTe2 p-n diodes with an ideality factor of 1.2 are fabricated using the p- and n-type doping technique to test the superb potential of the doping method in functional electronic device applications
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a MoTe2
|
| 650 |
|
4 |
|a controllable doping
|
| 650 |
|
4 |
|a mobility improvement
|
| 650 |
|
4 |
|a unipolar transistors
|
| 700 |
1 |
|
|a Liu, Xiaochi
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Huang, Ming
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Lee, Changmin
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Ahmed, Faisal
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Kim, Hyoungsub
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Ruoff, Rodney S
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Hone, James
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yoo, Won Jong
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 39 vom: 07. Okt.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:29
|g year:2017
|g number:39
|g day:07
|g month:10
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.201606433
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 29
|j 2017
|e 39
|b 07
|c 10
|