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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201700704
|2 doi
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|a pubmed24n0916.xml
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|a (NLM)28833622
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Chen, Kun
|e verfasserin
|4 aut
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|a A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T' Transition-Metal Telluride and Near-Field Nanooptical Properties
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The controlled synthesis of MoTe2 and WTe2 is crucial for their fundamental research and potential electronic applications. Here, a simplified ambient-pressure chemical vapor deposition (CVD) strategy is developed to synthesize high-quality and large-scale monolayer and few-layer 1T'-phase MoTe2 (length ≈ 1 mm) and WTe2 (length ≈ 350 µm) crystals by using ordinary salts (KCl or NaCl) as the growth promoter combining with low-cost (NH4 )6 Mo7 O24 ·4H2 O and hydrate (NH4 )10 W12 O41 ·xH2 O as the Mo and W sources, respectively. Atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy confirm the high-quality nature and the atomic structure of the as-grown 1T' MoTe2 and WTe2 flakes. Variable-temperature transport measurements exhibit their semimetal properties. Furthermore, near-field nanooptical imaging studies are performed on the 1T' MoTe2 and WTe2 flakes for the first time. The sub-wavelength effects of 1T'-phase MoTe2 (λp ≈ 140 nm) and WTe2 (λp ≈ 100 nm) are obtained. This approach paves the way for the growth of special transition-metal dichalcogenides materials and boosts the future polaritonic research of 2D telluride compounds
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|a Journal Article
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|a 1T′ MoTe2
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|a 1T′ WTe2
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|a APCVD
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|a ordinary salt promoters
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|a sub-wavelength effect
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|a Chen, Zefeng
|e verfasserin
|4 aut
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|a Wan, Xi
|e verfasserin
|4 aut
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|a Zheng, Zebo
|e verfasserin
|4 aut
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|a Xie, Fangyan
|e verfasserin
|4 aut
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|a Chen, Wenjun
|e verfasserin
|4 aut
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|a Gui, Xuchun
|e verfasserin
|4 aut
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|a Chen, Huanjun
|e verfasserin
|4 aut
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|a Xie, Weiguang
|e verfasserin
|4 aut
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|a Xu, Jianbin
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 38 vom: 04. Okt.
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
|g number:38
|g day:04
|g month:10
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|u http://dx.doi.org/10.1002/adma.201700704
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