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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201702759
|2 doi
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|a pubmed24n0916.xml
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|a (DE-627)NLM274889404
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|a (NLM)28815755
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Lan, Changyong
|e verfasserin
|4 aut
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|a Large-Scale Synthesis of Freestanding Layer-Structured PbI2 and MAPbI3 Nanosheets for High-Performance Photodetection
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Recently, due to the possibility of thinning down to the atomic thickness to achieve exotic properties, layered materials have attracted extensive research attention. In particular, PbI2 , a kind of layered material, and its perovskite derivatives, CH3 NH3 PbI3 (i.e., MAPbI3 ), have demonstrated impressive photoresponsivities for efficient photodetection. Herein, the synthesis of large-scale, high-density, and freestanding PbI2 nanosheets is demonstrated by manipulating the microenvironment during physical vapor deposition. In contrast to conventional two-dimensional (2D) growth along the substrate surface, the essence here is the effective nucleation of microplanes with different angles relative to the in-plane direction of underlying rough-surfaced substrates. When configured into photodetectors, the fabricated device exhibits a photoresponsivity of 410 mA W-1 , a detectivity of 3.1 × 1011 Jones, and a fast response with the rise and decay time constants of 86 and 150 ms, respectively, under a wavelength of 405 nm. These PbI2 nanosheets can also be completely converted into MAPbI3 materials via chemical vapor deposition with an improved photoresponsivity up to 40 A W-1 . All these performance parameters are comparable to those of state-of-the-art layered-material-based photodetectors, revealing the technological potency of these freestanding nanosheets for next-generation high-performance optoelectronics
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|a Journal Article
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|a MAPbI3
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4 |
|a PbI2
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|a nanosheets
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|a photodetection
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|a physical vapor deposition (PVD)
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1 |
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|a Dong, Ruoting
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Ziyao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shu, Lei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Dapan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yip, SenPo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ho, Johnny C
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 39 vom: 21. Okt.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:39
|g day:21
|g month:10
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|u http://dx.doi.org/10.1002/adma.201702759
|3 Volltext
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