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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201702069
|2 doi
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|a pubmed24n0914.xml
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|a (DE-627)NLM274326183
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|a (NLM)28758269
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Damodaran, Anoop R
|e verfasserin
|4 aut
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|a Three-State Ferroelastic Switching and Large Electromechanical Responses in PbTiO3 Thin Films
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Leveraging competition between energetically degenerate states to achieve large field-driven responses is a hallmark of functional materials, but routes to such competition are limited. Here, a new route to such effects involving domain-structure competition is demonstrated, which arises from strain-induced spontaneous partitioning of PbTiO3 thin films into nearly energetically degenerate, hierarchical domain architectures of coexisting c/a and a1 /a2 domain structures. Using band-excitation piezoresponse force microscopy, this study manipulates and acoustically detects a facile interconversion of different ferroelastic variants via a two-step, three-state ferroelastic switching process (out-of-plane polarized c+ → in-plane polarized a → out-of-plane polarized c- state), which is concomitant with large nonvolatile electromechanical strains (≈1.25%) and tunability of the local piezoresponse and elastic modulus (>23%). It is further demonstrated that deterministic, nonvolatile writing/erasure of large-area patterns of this electromechanical response is possible, thus showing a new pathway to improved function and properties
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|a Journal Article
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|a electromechanical responses
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|a ferroelectrics
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|a thin-film epitaxy
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|a three-state ferroelastic switching
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|a Pandya, Shishir
|e verfasserin
|4 aut
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|a Agar, Josh C
|e verfasserin
|4 aut
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|a Cao, Ye
|e verfasserin
|4 aut
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|a Vasudevan, Rama K
|e verfasserin
|4 aut
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|a Xu, Ruijuan
|e verfasserin
|4 aut
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|a Saremi, Sahar
|e verfasserin
|4 aut
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|a Li, Qian
|e verfasserin
|4 aut
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|a Kim, Jieun
|e verfasserin
|4 aut
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|a McCarter, Margaret R
|e verfasserin
|4 aut
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|a Dedon, Liv R
|e verfasserin
|4 aut
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|a Angsten, Tom
|e verfasserin
|4 aut
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|a Balke, Nina
|e verfasserin
|4 aut
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|a Jesse, Stephen
|e verfasserin
|4 aut
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|a Asta, Mark
|e verfasserin
|4 aut
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|a Kalinin, Sergei V
|e verfasserin
|4 aut
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|a Martin, Lane W
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 37 vom: 27. Okt.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:37
|g day:27
|g month:10
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|u http://dx.doi.org/10.1002/adma.201702069
|3 Volltext
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|d 29
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|e 37
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