Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 37 vom: 18. Okt.
1. Verfasser: Xie, Li (VerfasserIn)
Weitere Verfasser: Liao, Mengzhou, Wang, Shuopei, Yu, Hua, Du, Luojun, Tang, Jian, Zhao, Jing, Zhang, Jing, Chen, Peng, Lu, Xiaobo, Wang, Guole, Xie, Guibai, Yang, Rong, Shi, Dongxia, Zhang, Guangyu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoS2 graphene contacts short-channel effects ultrashort channels
Beschreibung
Zusammenfassung:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics
Beschreibung:Date Completed 18.07.2018
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201702522