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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201702427
|2 doi
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|a pubmed24n0911.xml
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|a (DE-627)NLM273585533
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|a (NLM)28682010
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Panlong
|e verfasserin
|4 aut
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| 245 |
1 |
0 |
|a Organic High Electron Mobility Transistors Realized by 2D Electron Gas
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm2 V-1 s-1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics
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|a Journal Article
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4 |
|a energy-band engineering
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4 |
|a high electron mobility transistors
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4 |
|a organic quantum wells
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4 |
|a organic semiconductors
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| 650 |
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4 |
|a two-dimensional electron gas
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| 700 |
1 |
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|a Wang, Haibo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Donghang
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 34 vom: 01. Sept.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:29
|g year:2017
|g number:34
|g day:01
|g month:09
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| 856 |
4 |
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|u http://dx.doi.org/10.1002/adma.201702427
|3 Volltext
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|d 29
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|e 34
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