Chemical Modification of n-Type-Material Naphthalene Diimide on ITO for Efficient and Stable Inverted Polymer Solar Cells

To provide orthogonal solvent processable surface modification and improve the device stability of bulk-heterojunction polymer solar cells (PSCs), n-type semiconducting material naphthalene diimide (NDI) was chemically introduced onto the ITO surface as a cathode interlayer (CIL) using 3-bromopropyl...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 33(2017), 35 vom: 05. Sept., Seite 8679-8685
1. Verfasser: Li, Zhendong (VerfasserIn)
Weitere Verfasser: Liu, Yanfeng, Zhang, Kaicheng, Wang, Zhaowei, Huang, Peng, Li, Dahua, Zhou, Yi, Song, Bo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't
Beschreibung
Zusammenfassung:To provide orthogonal solvent processable surface modification and improve the device stability of bulk-heterojunction polymer solar cells (PSCs), n-type semiconducting material naphthalene diimide (NDI) was chemically introduced onto the ITO surface as a cathode interlayer (CIL) using 3-bromopropyltrimethoxysilane (BrTMS) as a coupling agent. After modification, the work function of ITO can be decreased from 4.70 to 4.23 eV. The modified ITO cathode was applied in inverted PSCs based on PTB7-Th:PC71BM. With the CIL modification, a champion power conversion efficiency (PCE) of 5.87% was achieved, showing a dramatic improvement compared to that of devices (PCE = 3.58%) without CIL. More importantly, with these chemical bonded interlayers, the stability of inverted PSCs was greatly enhanced. The improved PCE and stability can be attributed to the increased open-circuit voltage and the formation of robust chemical bonds in NDI-TMS films, respectively. This study demonstrated that chemical modification of ITO with n-type semiconducting materials provides an avenue for not only solving the solvent orthogonal problem but also improving the device performance in terms of the PCE and the stability
Beschreibung:Date Completed 23.07.2018
Date Revised 23.07.2018
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827
DOI:10.1021/acs.langmuir.7b00678