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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201702055
|2 doi
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|a pubmed24n0910.xml
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|a (DE-627)NLM27317388X
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|a (NLM)28639380
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Ren, Zhenwei
|e verfasserin
|4 aut
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|a Bilayer PbS Quantum Dots for High-Performance Photodetectors
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next-generation light, low-cost, and flexible photodetectors. Current single-layer PbS-QD photodetectors suffer from shortcomings of large dark currents, low on-off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high-conducting graphene/nanotube to form hybrid PbS-QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single-layer and hybrid PbS-QD photodetectors face, here a bilayer QD-only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single-layer devices in response speed, detectivity, linear dynamic range, and signal-to-noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD-based photodetectors for applications in future flexible optoelectronics
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|a Journal Article
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|a PbS quantum dots
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|a bilayers
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|a junctions
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|a photodetectors
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|a responsivities
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1 |
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|a Sun, Jiankun
|e verfasserin
|4 aut
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1 |
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|a Li, Hui
|e verfasserin
|4 aut
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1 |
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|a Mao, Peng
|e verfasserin
|4 aut
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1 |
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|a Wei, Yuanzhi
|e verfasserin
|4 aut
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1 |
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|a Zhong, Xinhua
|e verfasserin
|4 aut
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1 |
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|a Hu, Jinsong
|e verfasserin
|4 aut
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1 |
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|a Yang, Shiyong
|e verfasserin
|4 aut
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700 |
1 |
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|a Wang, Jizheng
|e verfasserin
|4 aut
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773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 33 vom: 22. Sept.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:33
|g day:22
|g month:09
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|u http://dx.doi.org/10.1002/adma.201702055
|3 Volltext
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|d 29
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