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231225s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201701888
|2 doi
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|a pubmed24n0910.xml
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|a (DE-627)NLM273065971
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|a (NLM)28628253
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Qu, Jiangtao
|e verfasserin
|4 aut
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| 245 |
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|a 3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic-scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first-principles simulation to investigate the 3D structure and chemistry of InGaAs nanowires, and reveals i) the nanowires form a spontaneous core-shell structure with a Ga-enriched core and an In-enriched shell, due to different growth mechanisms in the axial and lateral directions; ii) the shape of the core evolves from hexagon into Reuleaux triangle and grows larger, which results from In outward and Ga inward interdiffusion occurring at the core-shell interface; and iii) the irregular hexagonal shell manifests an anisotropic growth rate on {112}A and {112}B facets. Accordingly, a model in terms of the core-shell shape and chemistry evolution is proposed, which provides fresh insights into the growth of these nanowires
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|a Journal Article
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|a InGaAs nanowires
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|a atom probe tomography
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|a core-shell structures
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|a epitaxy growth
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|a gold catalysts
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1 |
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|a Du, Sichao
|e verfasserin
|4 aut
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1 |
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|a Burgess, Tim
|e verfasserin
|4 aut
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1 |
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|a Wang, Changhong
|e verfasserin
|4 aut
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1 |
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|a Cui, Xiangyuan
|e verfasserin
|4 aut
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1 |
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|a Gao, Qiang
|e verfasserin
|4 aut
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1 |
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|a Wang, Weichao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tan, Hark Hoe
|e verfasserin
|4 aut
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1 |
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|a Liu, Hui
|e verfasserin
|4 aut
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|a Jagadish, Chennupati
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Yingjie
|e verfasserin
|4 aut
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|a Chen, Hansheng
|e verfasserin
|4 aut
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|a Khan, Mansoor
|e verfasserin
|4 aut
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1 |
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|a Ringer, Simon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zheng, Rongkun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 31 vom: 19. Aug.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:29
|g year:2017
|g number:31
|g day:19
|g month:08
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|u http://dx.doi.org/10.1002/adma.201701888
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 29
|j 2017
|e 31
|b 19
|c 08
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