Thermal Light Emission from Monolayer MoS2

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 29(2017), 31 vom: 16. Aug.
1. Verfasser: Dobusch, Lukas (VerfasserIn)
Weitere Verfasser: Schuler, Simone, Perebeinos, Vasili, Mueller, Thomas
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2017
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article MoS2 field-effect transistors light emission thermal conductivity
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520 |a Layered transition metal dichalcogenide semiconductors, such as MoS2 and WSe2 , exhibit a range of fascinating properties and are being currently explored for a variety of electronic and optoelectronic devices. These properties include a low thermal conductivity and a large Seebeck coefficient, which make them promising for thermoelectric applications. Moreover, transition metal dichalcogenides undergo an indirect-to-direct bandgap transition when thinned down in thickness, leading to strong excitonic photo- and electroluminescence in monolayers. Here, it is demonstrated that a MoS2 monolayer sheet, freely suspended in vacuum over a distance of 150 nm, emits visible light as a result of Joule heating. Due to the poor transfer of heat to the contact electrodes, as well as the suppressed heat dissipation through the underlying substrate, the electron temperature can reach ≈1500-1600 K. The resulting narrow-band light emission from thermally populated exciton states is spatially located to an only ≈50 nm wide region in the center of the device and goes along with a negative differential electrical conductance of the channel 
650 4 |a Journal Article 
650 4 |a MoS2 
650 4 |a field-effect transistors 
650 4 |a light emission 
650 4 |a thermal conductivity 
700 1 |a Schuler, Simone  |e verfasserin  |4 aut 
700 1 |a Perebeinos, Vasili  |e verfasserin  |4 aut 
700 1 |a Mueller, Thomas  |e verfasserin  |4 aut 
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