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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201700579
|2 doi
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|a pubmed25n0909.xml
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|a eng
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|a Cho, Himchan
|e verfasserin
|4 aut
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|a High-Efficiency Solution-Processed Inorganic Metal Halide Perovskite Light-Emitting Diodes
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a This paper reports highly bright and efficient CsPbBr3 perovskite light-emitting diodes (PeLEDs) fabricated by simple one-step spin-coating of uniform CsPbBr3 polycrystalline layers on a self-organized buffer hole injection layer and stoichiometry-controlled CsPbBr3 precursor solutions with an optimized concentration. The PeLEDs have maximum current efficiency of 5.39 cd A-1 and maximum luminance of 13752 cd m-2 . This paper also investigates the origin of current hysteresis, which can be ascribed to migration of Br- anions. Temperature dependence of the electroluminescence (EL) spectrum is measured and the origins of decreased spectrum area, spectral blue-shift, and linewidth broadening are analyzed systematically with the activation energies, and are related with Br- anion migration, thermal dissociation of excitons, thermal expansion, and electron-phonon interaction. This work provides simple ways to improve the efficiency and brightness of all-inorganic polycrystalline PeLEDs and improves understanding of temperature-dependent ion migration and EL properties in inorganic PeLEDs
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|a Journal Article
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|a cesium lead halides
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|a electron-phonon coupling
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|a inorganic halide perovskites
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|a light-emitting diodes, next-generation emitters
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|a Wolf, Christoph
|e verfasserin
|4 aut
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|a Kim, Joo Sung
|e verfasserin
|4 aut
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|a Yun, Hyung Joong
|e verfasserin
|4 aut
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|a Bae, Jong Seong
|e verfasserin
|4 aut
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|a Kim, Hobeom
|e verfasserin
|4 aut
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|a Heo, Jung-Min
|e verfasserin
|4 aut
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|a Ahn, Soyeong
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Tae-Woo
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 31 vom: 15. Aug.
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
|g number:31
|g day:15
|g month:08
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|u http://dx.doi.org/10.1002/adma.201700579
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