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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201700441
|2 doi
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|a pubmed25n0908.xml
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|a (DE-627)NLM272697591
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|a (NLM)28589700
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Song, Huaibing
|e verfasserin
|4 aut
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|a Highly Anisotropic Sb2 Se3 Nanosheets
|b Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 19.10.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D materials, particularly those bearing in-plane anisotropic optical and electrical properties such as black phosphorus and ReS2 , have spurred great research interest very recently as promising building blocks for future electronics. However, current progress is limited to layered compounds that feature atomic arrangement asymmetry within the covalently bonded planes. Herein, a series of highly anisotropic nanosheets (Sb2 Se3 , Sb2 S3 , Bi2 S3 , and Sb2 (S, Se)3 ), which are composed of 1D covalently linked ribbons stacked together via van der Waals force, is introduced as a new member to the anisotropic 2D material family. These unique anisotropic nanosheets are successfully fabricated from their polymer-like bulk counterparts through a gentle water freezing-thawing approach. Angle-resolved polarized Raman spectroscopy characterization confirms the strong in-plane asymmetry of Sb2 Se3 nanosheets, and photodetection study reveals their high responsivity and anisotropic in-plane transport. This work can enlighten the synthesis and application of new anisotropic 2D nanosheets that can be potentially applied for future electronic and optoelectronic devices
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|a Journal Article
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|a 1D ribbons
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|a 2D nanosheets
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|a Sb2Se3
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|a anisotropic materials
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|a Li, Tiaoyang
|e verfasserin
|4 aut
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|a Zhang, Jia
|e verfasserin
|4 aut
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|a Zhou, Ying
|e verfasserin
|4 aut
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|a Luo, Jiajun
|e verfasserin
|4 aut
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|a Chen, Chao
|e verfasserin
|4 aut
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|a Yang, Bo
|e verfasserin
|4 aut
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|a Ge, Cong
|e verfasserin
|4 aut
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|a Wu, Yanqing
|e verfasserin
|4 aut
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| 700 |
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|a Tang, Jiang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 29 vom: 01. Aug.
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:29
|g day:01
|g month:08
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|u http://dx.doi.org/10.1002/adma.201700441
|3 Volltext
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