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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201700951
|2 doi
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|a pubmed24n0906.xml
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|a DE-627
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|a eng
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|a Lee, Minkyung
|e verfasserin
|4 aut
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|a Brain-Inspired Photonic Neuromorphic Devices using Photodynamic Amorphous Oxide Semiconductors and their Persistent Photoconductivity
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The combination of a neuromorphic architecture and photonic computing may open up a new era for computational systems owing to the possibility of attaining high bandwidths and the low-computation-power requirements. Here, the demonstration of photonic neuromorphic devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short-term memory/long-term memory, spike-timing-dependent plasticity, and neural facilitation, is reported. The synaptic functions are successfully emulated using the inherent persistent photoconductivity (PPC) characteristic of AOSs. Systematic analysis of the dynamics of photogenerated carriers for various AOSs is carried out to understand the fundamental mechanisms underlying the photoinduced carrier-generation and relaxation behaviors, and to search for a proper channel material for photonic neuromorphic devices. It is found that the activation energy for the neutralization of ionized oxygen vacancies has a significant influence on the photocarrier-generation and time-variant recovery behaviors of AOSs, affecting the PPC behavior
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|a Journal Article
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|a amorphous oxide semiconductors
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4 |
|a persistent photoconductivity
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|a photonic neuromorphic devices
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4 |
|a synaptic devices
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1 |
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|a Lee, Woobin
|e verfasserin
|4 aut
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1 |
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|a Choi, Seungbeom
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jo, Jeong-Wan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jaekyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Sung Kyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Yong-Hoon
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 28 vom: 16. Juli
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:28
|g day:16
|g month:07
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|u http://dx.doi.org/10.1002/adma.201700951
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