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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201700672
|2 doi
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|a pubmed24n0905.xml
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|a (NLM)28464394
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Chen, Aiping
|e verfasserin
|4 aut
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| 245 |
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|a Hidden Interface Driven Exchange Coupling in Oxide Heterostructures
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. However, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. Our results shed new light on using oxide interfaces to design functional spintronic devices
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|a Journal Article
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|a epitaxial thin films
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|a interface
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|a magnetism
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|a polarized neutron reflectometry
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|a Wang, Qiang
|e verfasserin
|4 aut
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|a Fitzsimmons, Michael R
|e verfasserin
|4 aut
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|a Enriquez, Erik
|e verfasserin
|4 aut
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|a Weigand, Marcus
|e verfasserin
|4 aut
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|a Harrell, Zach
|e verfasserin
|4 aut
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|a McFarland, Brian
|e verfasserin
|4 aut
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|a Lü, Xujie
|e verfasserin
|4 aut
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|a Dowden, Paul
|e verfasserin
|4 aut
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|a MacManus-Driscoll, Judith L
|e verfasserin
|4 aut
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|a Yarotski, Dmitry
|e verfasserin
|4 aut
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| 700 |
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|a Jia, Quanxi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 26 vom: 01. Juli
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
|g number:26
|g day:01
|g month:07
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|u http://dx.doi.org/10.1002/adma.201700672
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