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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201606945
|2 doi
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|a pubmed24n0903.xml
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|a (DE-627)NLM271122560
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|a (NLM)28425630
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|a DE-627
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|a eng
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|a Shin, Donghyeop
|e verfasserin
|4 aut
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|a Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a In recent years, Cu2 ZnSn(S,Se)4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu2 BaSnS4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu2 BaSnS4-x Sex (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu2 BaSnS4-x Sex family for high-efficiency and earth-abundant PV
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|a Journal Article
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|a Cu2BaSn(S,Se)4
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|a cationic disordering
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|a earth-abundant chalcogenides
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|a photovoltaic devices
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|a trigonal crystal structures
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|a Zhu, Tong
|e verfasserin
|4 aut
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|a Huang, Xuan
|e verfasserin
|4 aut
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|a Gunawan, Oki
|e verfasserin
|4 aut
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|a Blum, Volker
|e verfasserin
|4 aut
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| 700 |
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|a Mitzi, David B
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 24 vom: 15. Juni
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:29
|g year:2017
|g number:24
|g day:15
|g month:06
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|u http://dx.doi.org/10.1002/adma.201606945
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