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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201606042
|2 doi
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|a pubmed24n0903.xml
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|a (DE-627)NLM27104537X
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|a (NLM)28417487
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Luo, Wei
|e verfasserin
|4 aut
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| 245 |
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|a Reducing Interfacial Resistance between Garnet-Structured Solid-State Electrolyte and Li-Metal Anode by a Germanium Layer
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Substantial efforts are underway to develop all-solid-state Li batteries (SSLiBs) toward high safety, high power density, and high energy density. Garnet-structured solid-state electrolyte exhibits great promise for SSLiBs owing to its high Li-ion conductivity, wide potential window, and sufficient thermal/chemical stability. A major challenge of garnet is that the contact between the garnet and the Li-metal anodes is poor due to the rigidity of the garnet, which leads to limited active sites and large interfacial resistance. This study proposes a new methodology for reducing the garnet/Li-metal interfacial resistance by depositing a thin germanium (Ge) (20 nm) layer on garnet. By applying this approach, the garnet/Li-metal interfacial resistance decreases from ≈900 to ≈115 Ω cm2 due to an alloying reaction between the Li metal and the Ge. In agreement with experiments, first-principles calculation confirms the good stability and improved wetting at the interface between the lithiated Ge layer and garnet. In this way, this unique Ge modification technique enables a stable cycling performance of a full cell of lithium metal, garnet electrolyte, and LiFePO4 cathode at room temperature
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|a Journal Article
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|a Li-metal anodes
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|a first-principles calculations
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|a garnet
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|a reducing interfacial resistance
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|a solid-state electrolytes
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|a Gong, Yunhui
|e verfasserin
|4 aut
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1 |
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|a Zhu, Yizhou
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yiju
|e verfasserin
|4 aut
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1 |
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|a Yao, Yonggang
|e verfasserin
|4 aut
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1 |
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|a Zhang, Ying
|e verfasserin
|4 aut
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1 |
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|a Fu, Kun Kelvin
|e verfasserin
|4 aut
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1 |
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|a Pastel, Glenn
|e verfasserin
|4 aut
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1 |
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|a Lin, Chuan-Fu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Mo, Yifei
|e verfasserin
|4 aut
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1 |
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|a Wachsman, Eric D
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Liangbing
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 22 vom: 20. Juni
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:22
|g day:20
|g month:06
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|u http://dx.doi.org/10.1002/adma.201606042
|3 Volltext
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|a AR
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|d 29
|j 2017
|e 22
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