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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201606927
|2 doi
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|a pubmed24n0902.xml
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|a (DE-627)NLM270848622
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|a (NLM)28397309
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Hu, Lingxiang
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a For biological synapses, high sensitivity is crucial for transmitting information quickly and accurately. Compared to biological synapses, memristive ones show a much lower sensitivity to electrical stimuli since much higher voltages are needed to induce synaptic plasticity. Yet, little attention has been paid to enhancing the sensitivity of synaptic devices. Here, electrochemical metallization memory cells based on lightly oxidized ZnS films are found to show highly controllable memristive switching with an ultralow SET voltage of several millivolts, which likely originates from a two-layer structure of ZnS films, i.e., the lightly oxidized and unoxidized layers, where the filament rupture/rejuvenation is confined to the two-layer interface region several nanometers in thickness due to different ion transport rates in these two layers. Based on such devices, an ultrasensitive memristive synapse is realized where the synaptic functions of both short-term plasticity and long-term potentiation are emulated by applying electrical stimuli several millivolts in amplitude, whose sensitivity greatly surpasses that of biological synapses. The dynamic processes of memorizing and forgetting are mimicked through a 5 × 5 memristive synapse array. In addition, the ultralow operating voltage provides another effective solution to the relatively high energy consumption of synaptic devices besides reducing the operating current and pulse width
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|a Journal Article
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|a lightly oxidized ZnS
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|a memristive synapses
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|a resistive switching
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|a ultrasensitive
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1 |
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|a Fu, Sheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Youhu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cao, Hongtao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liang, Lingyan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Hongliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Junhua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jingrui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhuge, Fei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 24 vom: 07. Juni
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:29
|g year:2017
|g number:24
|g day:07
|g month:06
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|u http://dx.doi.org/10.1002/adma.201606927
|3 Volltext
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|d 29
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