|
|
|
|
LEADER |
01000naa a22002652 4500 |
001 |
NLM270587519 |
003 |
DE-627 |
005 |
20231224230858.0 |
007 |
cr uuu---uuuuu |
008 |
231224s2017 xx |||||o 00| ||eng c |
024 |
7 |
|
|a 10.1002/adma.201605911
|2 doi
|
028 |
5 |
2 |
|a pubmed24n0901.xml
|
035 |
|
|
|a (DE-627)NLM270587519
|
035 |
|
|
|a (NLM)28370556
|
040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
041 |
|
|
|a eng
|
100 |
1 |
|
|a Bahramy, Mohammad Saeed
|e verfasserin
|4 aut
|
245 |
1 |
0 |
|a Bulk Rashba Semiconductors and Related Quantum Phenomena
|
264 |
|
1 |
|c 2017
|
336 |
|
|
|a Text
|b txt
|2 rdacontent
|
337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
500 |
|
|
|a Date Completed 17.07.2018
|
500 |
|
|
|a Date Revised 30.09.2020
|
500 |
|
|
|a published: Print-Electronic
|
500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
520 |
|
|
|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
520 |
|
|
|a Bithmuth tellurohalides BiTeX (X = Cl, Br and I) are model examples of bulk Rashba semiconductors, exhibiting a giant Rashba-type spin splitting among their both valence and conduction bands. Extensive spectroscopic and transport experiments combined with the state-of-the-art first-principles calculations have revealed many unique quantum phenomena emerging from the bulk Rashba effect in these systems. The novel features such as the exotic inter- and intra-band optical transitions, enhanced magneto-optical response, divergent orbital dia-/para-magnetic susceptibility and helical spin textures with a nontrivial Berry's phase in the momentum space are among the salient discoveries, all arising from this effect. Also, it is theoretically proposed and indications have been experimentally reported that bulk Rashba semiconductors such as BiTeI have the capability of becoming a topological insulator under the application of a hydrostatic pressure. Here, we overview these studies and show that BiTeX are an ideal platform to explore the next aspects of quantum matter, which could ultimately be utilized to create spintronic devices with novel functionalities
|
650 |
|
4 |
|a Journal Article
|
650 |
|
4 |
|a Review
|
650 |
|
4 |
|a Berry's phase
|
650 |
|
4 |
|a bulk Rashba effect
|
650 |
|
4 |
|a relativistic optical responses
|
650 |
|
4 |
|a spin-orbit interactions
|
650 |
|
4 |
|a topological phase transitions
|
700 |
1 |
|
|a Ogawa, Naoki
|e verfasserin
|4 aut
|
773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 25 vom: 15. Juli
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
773 |
1 |
8 |
|g volume:29
|g year:2017
|g number:25
|g day:15
|g month:07
|
856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.201605911
|3 Volltext
|
912 |
|
|
|a GBV_USEFLAG_A
|
912 |
|
|
|a SYSFLAG_A
|
912 |
|
|
|a GBV_NLM
|
912 |
|
|
|a GBV_ILN_350
|
951 |
|
|
|a AR
|
952 |
|
|
|d 29
|j 2017
|e 25
|b 15
|c 07
|