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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201606372
|2 doi
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|a eng
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| 100 |
1 |
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|a Rodriguez, Francisco J
|e verfasserin
|4 aut
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| 245 |
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|a Solid-State Electrolyte-Gated Graphene in Optical Modulators
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|c 2017
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The gate-tunable wide-band absorption of graphene makes it suitable for light modulation from terahertz to visible light. The realization of graphene-based modulators, however, faces challenges connected with graphene's low absorption and the high electric fields necessary to change graphene's optical conductivity. Here, a solid-state supercapacitor effect with the high-k dielectric hafnium oxide is demonstrated that allows modulation from the near-infrared to shorter wavelengths close to the visible spectrum with remarkably low voltages (≈3 V). The electroabsorption modulators are based on a Fabry-Perot-resonator geometry that allows modulation depths over 30% for free-space beams
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|a Journal Article
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|a HfO2
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|a Pauli blocking
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|a double layers
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|a field-effect transistors
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|a graphene heterostructures
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| 700 |
1 |
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|a Aznakayeva, Diana E
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Marshall, Owen P
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kravets, Vasyl G
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Grigorenko, Alexander N
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
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|g 29(2017), 19 vom: 20. Mai
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|u http://dx.doi.org/10.1002/adma.201606372
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