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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201605965
|2 doi
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|a pubmed24n0898.xml
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|a (DE-627)NLM269543813
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|a (NLM)28262997
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Qi, Yanpeng
|e verfasserin
|4 aut
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|a Topological Quantum Phase Transition and Superconductivity Induced by Pressure in the Bismuth Tellurohalide BiTeI
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor bismuth tellurohalide BiTeI with giant Rashba spin splitting. In this work, evolution of the electrical transport properties in BiTeI and BiTeBr is investigated under high pressure. The pressure-dependent resistivity in a wide temperature range passes through a minimum at around 3 GPa, indicating the predicted topological quantum phase transition in BiTeI. Superconductivity is observed in both BiTeI and BiTeBr, while resistivity at higher temperatures still exhibits semiconducting behavior. Theoretical calculations suggest that superconductivity may develop from the multivalley semiconductor phase. The superconducting transition temperature, Tc , increases with applied pressure and reaches a maximum value of 5.2 K at 23.5 GPa for BiTeI (4.8 K at 31.7 GPa for BiTeBr), followed by a slow decrease. The results demonstrate that BiTeX (X = I, Br) compounds with nontrivial topology of electronic states display new ground states upon compression
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|a Journal Article
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|a high pressure
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|a superconductivity
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|a topological materials
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|a Shi, Wujun
|e verfasserin
|4 aut
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1 |
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|a Naumov, Pavel G
|e verfasserin
|4 aut
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1 |
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|a Kumar, Nitesh
|e verfasserin
|4 aut
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|a Sankar, Raman
|e verfasserin
|4 aut
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|a Schnelle, Walter
|e verfasserin
|4 aut
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|a Shekhar, Chandra
|e verfasserin
|4 aut
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|a Chou, Fang-Cheng
|e verfasserin
|4 aut
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|a Felser, Claudia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yan, Binghai
|e verfasserin
|4 aut
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| 700 |
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|a Medvedev, Sergey A
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 18 vom: 16. Mai
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:18
|g day:16
|g month:05
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|u http://dx.doi.org/10.1002/adma.201605965
|3 Volltext
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