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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201606478
|2 doi
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|a pubmed24n0898.xml
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|a (DE-627)NLM269482415
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|a (NLM)28256772
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|a eng
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|a Zhao, Shishun
|e verfasserin
|4 aut
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|a Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+ [TFSI]- /Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V-1 . Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices
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|a Journal Article
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|a ferromagnetic resonance
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|a interfacial oxidation
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|a ionic liquid gating
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|a voltage control of magnetism
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|a Zhou, Ziyao
|e verfasserin
|4 aut
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1 |
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|a Peng, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Mingmin
|e verfasserin
|4 aut
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|a Feng, Mengmeng
|e verfasserin
|4 aut
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|a Yang, Qu
|e verfasserin
|4 aut
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|a Yan, Yuan
|e verfasserin
|4 aut
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|a Ren, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ye, Zuo-Guang
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Yaohua
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Ming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 17 vom: 05. Mai
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
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|u http://dx.doi.org/10.1002/adma.201606478
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