Bertolazzi, S., Bonacchi, S., Nan, G., Pershin, A., Beljonne, D., & Samorì, P. (2017). Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols. Advanced materials (Deerfield Beach, Fla.), 29(18), . https://doi.org/10.1002/adma.201606760
Style de citation ChicagoBertolazzi, Simone, Sara Bonacchi, Guangjun Nan, Anton Pershin, David Beljonne, et Paolo Samorì. "Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols." Advanced Materials (Deerfield Beach, Fla.) 29, no. 18 (2017). https://dx.doi.org/10.1002/adma.201606760.
Style de citation MLABertolazzi, Simone, et al. "Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols." Advanced Materials (Deerfield Beach, Fla.), vol. 29, no. 18, 2017.