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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201605625
|2 doi
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|a pubmed24n0897.xml
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|a (DE-627)NLM269324011
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|a (NLM)28240434
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Yang, Siwei
|e verfasserin
|4 aut
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|a C3 N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
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|c 2017
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C3 N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C3 N is fabricated by polymerization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h -symmetry. C3 N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C3 N display an on-off current ratio reaching 5.5 × 1010 . Surprisingly, C3 N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications
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|a Journal Article
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|a 2D materials
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|a carbon
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|a ferromagnetic properties
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|a semiconductors
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|a Li, Wei
|e verfasserin
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|a Ye, Caichao
|e verfasserin
|4 aut
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|a Wang, Gang
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|4 aut
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|a Tian, He
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|4 aut
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|a Zhu, Chong
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|a He, Peng
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|a Ding, Guqiao
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|4 aut
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|a Xie, Xiaoming
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|4 aut
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|a Liu, Yang
|e verfasserin
|4 aut
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|a Lifshitz, Yeshayahu
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|4 aut
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|a Lee, Shuit-Tong
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|4 aut
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|a Kang, Zhenhui
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|a Jiang, Mianheng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 16 vom: 05. Apr.
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:29
|g year:2017
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|g day:05
|g month:04
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|u http://dx.doi.org/10.1002/adma.201605625
|3 Volltext
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