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231224s2017 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201606806
|2 doi
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|a pubmed24n0897.xml
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|a (DE-627)NLM269323651
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|a (NLM)28240401
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhang, Fei
|e verfasserin
|4 aut
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|a Isomer-Pure Bis-PCBM-Assisted Crystal Engineering of Perovskite Solar Cells Showing Excellent Efficiency and Stability
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|c 2017
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 18.07.2018
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A fullerene derivative (α-bis-PCBM) is purified from an as-produced bis-phenyl-C61 -butyric acid methyl ester (bis-[60]PCBM) isomer mixture by preparative peak-recycling, high-performance liquid chromatography, and is employed as a templating agent for solution processing of metal halide perovskite films via an antisolvent method. The resulting α-bis-PCBM-containing perovskite solar cells achieve better stability, efficiency, and reproducibility when compared with analogous cells containing PCBM. α-bis-PCBM fills the vacancies and grain boundaries of the perovskite film, enhancing the crystallization of perovskites and addressing the issue of slow electron extraction. In addition, α-bis-PCBM resists the ingression of moisture and passivates voids or pinholes generated in the hole-transporting layer. As a result, a power conversion efficiency (PCE) of 20.8% is obtained, compared with 19.9% by PCBM, and is accompanied by excellent stability under heat and simulated sunlight. The PCE of unsealed devices dropped by less than 10% in ambient air (40% RH) after 44 d at 65 °C, and by 4% after 600 h under continuous full-sun illumination and maximum power point tracking, respectively
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|a Journal Article
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|a bis-PCBM
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|a perovskites
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|a solar cells
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|a stabilities
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|a Shi, Wenda
|e verfasserin
|4 aut
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|a Luo, Jingshan
|e verfasserin
|4 aut
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|a Pellet, Norman
|e verfasserin
|4 aut
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|a Yi, Chenyi
|e verfasserin
|4 aut
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|a Li, Xiong
|e verfasserin
|4 aut
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1 |
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|a Zhao, Xiaoming
|e verfasserin
|4 aut
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1 |
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|a Dennis, T John S
|e verfasserin
|4 aut
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1 |
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|a Li, Xianggao
|e verfasserin
|4 aut
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1 |
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|a Wang, Shirong
|e verfasserin
|4 aut
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|a Xiao, Yin
|e verfasserin
|4 aut
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|a Zakeeruddin, Shaik Mohammed
|e verfasserin
|4 aut
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|a Bi, Dongqin
|e verfasserin
|4 aut
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|a Grätzel, Michael
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 29(2017), 17 vom: 20. Mai
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:29
|g year:2017
|g number:17
|g day:20
|g month:05
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|u http://dx.doi.org/10.1002/adma.201606806
|3 Volltext
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